Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications.

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

Ionic effect on the transport characteristics of nanowire-based FETs in liquid environment

For the development of ultra-sensitive electrical bio/chemical sensors based on nanowire field-effect-transistors (FET), the influence of the ions in the solution on the electron transport has to be understood. For this purpose we establish a simulation platform for nanowire FETs in the liquid environment by implementing the modified Poisson-Boltzmann model into Landauer transport theory. We in...

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are ...

Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...